| PART |
Description |
Maker |
| TIM0910-5 |
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
|
Toshiba Semiconductor
|
| BFY181 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Siemens Semiconductor G...
|
| BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| BFY196 |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)
|
SIEMENS[Siemens Semiconductor Group]
|
| Q62702A674 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching)
|
Siemens Semiconductor G...
|
| MPAT-584643-10151MS MPAT-584643-10153FS MPAT-58464 |
5845 MHz - 6430 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
950 MHz - 1450 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
14000 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
10.95 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
13750 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
11700 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
3800 MHz - 4100 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.3 dB INSERTION LOSS-MAX
17300 MHz - 17800 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.7 dB INSERTION LOSS-MAX
2000 MHz - 2200 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
17700 MHz - 20200 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
1275 MHz - 1480 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
4000 MHz - 8000 MHz RF/MICROWAVE FIXED ATTENUATOR, 2 dB INSERTION LOSS-MAX
3100 MHz - 3500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
8000 MHz - 12000 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
18800 MHz - 19600 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
1500 MHz - 1800 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
950 MHz - 1750 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
6400 MHz - 7200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
10700 MHz - 11700 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
MITEQ INC
|
| TIM5359-45SL |
MICROWAVE SEMICONDUCTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| PSV/30A-12 PSV/750C-12 PSV/1800E-63 PSV/1600E-15 P |
28.5 MHz - 31.5 MHz, 180 deg - RF/MICROWAVE PHASE SHIFTER
712.5 MHz - 787.5 MHz, 140 deg - RF/MICROWAVE PHASE SHIFTER
1665 MHz - 1935 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
1480 MHz - 1720 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
902.5 MHz - 997.5 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
475 MHz - 525 MHz, 160 deg - RF/MICROWAVE PHASE SHIFTER
2312.5 MHz - 2687.5 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
1110 MHz - 1290 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
807.5 MHz - 892.5 MHz, 90 deg - RF/MICROWAVE PHASE SHIFTER
712.5 MHz - 787.5 MHz, 270 deg - RF/MICROWAVE PHASE SHIFTER
|
Astrodyne, Inc.
MEAN WELL Enterprises Co., Ltd.
NXP Semiconductors N.V.
|
| CU41K2B1P-902.5-1T CU41K2A1P-902.5-1T CU41K2B1P-14 |
890 MHz - 915 MHz RF/MICROWAVE ISOLATOR
1429 MHz - 1453 MHz RF/MICROWAVE ISOLATOR
100 MHz - 200 MHz RF/MICROWAVE 3 PORT CIRCULATOR
872 MHz - 905 MHz RF/MICROWAVE ISOLATOR
940 MHz - 960 MHz RF/MICROWAVE ISOLATOR
|
Samtec, Inc.
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| AFS5-10951175-09-10P-5 AFS42-04400510-07-10P-44 AF |
10950 MHz - 11750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
4400 MHz - 5100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2200 MHz - 2300 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1400 MHz - 1700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6700 MHz - 7100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
700 MHz - 800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7900 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
